公开(公告)号：US20180096822A1

公开(公告)日：2018-04-05

申请号：US15834528

申请日：2017-12-07

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

公开(公告)号：US11037763B2

公开(公告)日：2021-06-15

申请号：US15989324

申请日：2018-05-25

Applicant: Tokyo Electron Limited

Inventor： Yuki Sugawara ,  Masanori Asahara ,  Masafumi Urakawa

IPC: H01J37/32

Abstract: There is provision of a member used in a plasma processing apparatus configured to generate plasma from a gas in a processing vessel and to process a substrate disposed on a mounting base in the processing vessel using the plasma. The member includes a surface exposed to the plasma in the processing vessel in a state installed in the processing vessel, and a coating layer including cobalt which covers a part of the surface.

公开(公告)号：US09870898B2

公开(公告)日：2018-01-16

申请号：US15018981

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

公开(公告)号：US12211678B2

公开(公告)日：2025-01-28

申请号：US17517253

申请日：2021-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masafumi Urakawa

IPC: H01J37/32 ,  H01J37/34

Abstract: A recipe updating method of a plasma processing apparatus includes: performing a plasma processing on a substrate mounted on a stage using a first recipe including an application timing of a radio-frequency power for plasma generation; measuring a reference timing at which a temperature of the stage drops to a minimum value and a first maximum value of the temperature of the stage in association with the first recipe; performing the plasma processing on the substrate using a second recipe obtained by changing the application timing of the first recipe to the reference timing; measuring a second maximum value of the temperature of the stage in association with the second recipe; and updating the first recipe to the second recipe when the second maximum value is smaller than the first maximum value.

公开(公告)号：US10707053B2

公开(公告)日：2020-07-07

申请号：US15834528

申请日：2017-12-07

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa ,  Koichi Nagami

IPC: H01J37/32

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

公开(公告)号：US20150140828A1

公开(公告)日：2015-05-21

申请号：US14400381

申请日：2013-05-27

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa

IPC: H01L21/308 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3081 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069

Abstract: A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel.

Abstract translation: 蚀刻包含多晶硅的蚀刻目标层的方法包括制备包括蚀刻目标层和形成在蚀刻目标层上的掩模的目标物体; 并用掩模蚀刻蚀刻目标层。 此外，掩模包括由多晶硅形成的第一掩模部分和介于第一掩模部分和蚀刻目标层之间并由氧化硅形成的第二掩模部分。 此外，在蚀刻目标层的蚀刻中，用于蚀刻蚀刻目标层的第一气体，用于除去附着在掩模上的沉积物的第二气体和用于保护第一掩模部分的第三气体被供给到处理容器 其中容纳目标物体，并且在处理容器内产生这些气体的等离子体。

公开(公告)号：US09865471B2

公开(公告)日：2018-01-09

申请号：US15133314

申请日：2016-04-20

Applicant: Tokyo Electron Limited

Inventor： Gaku Shimoda ,  Hotaka Maruyama ,  Takanori Sato ,  Masafumi Urakawa ,  Masahiro Ogasawara

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/334 ,  H01J2237/3345 ,  H01J2237/3348 ,  H01L21/67109

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

公开(公告)号：US09653316B2

公开(公告)日：2017-05-16

申请号：US14182707

申请日：2014-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masafumi Urakawa

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/32137

Abstract: Disclosed is a plasma processing method which includes a gas supplying process, a power supplying process, and an etching process. In the gas supplying process, a processing gas is supplied into a processing container in which an object to be processed is disposed. In the power supplying process, a plasma generating power of a frequency ranging from about 100 MHz to about 150 MHz as a power for generating plasma of the processing gas supplied into the processing container, and a biasing power which is a power having a frequency lower than that of the plasma generating power are supplied. In the etching process, the object to be processed is etched by the plasma of the processing gas while the biasing power is pulse-modulated so that the duty ratio ranges from about 10% to about 70% and the frequency ranges from about 5 kHz to about 20 kHz.

公开(公告)号：US09530657B2

公开(公告)日：2016-12-27

申请号：US14529241

申请日：2014-10-31

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa ,  Rui Takahashi ,  Masahiro Ogasawara

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract translation: 一种使用具有静电卡盘的基板处理装置的基板处理装置的方法，所述基板处理装置包括绝缘构件，所述绝缘构件包括电极并且向安装在所述静电卡盘上的基板提供等离子体处理，所述第一工序提供具有 使用具有第一气体压力的处理气体的等离子体消除基板中的电荷的第二气体压力到基板的背面。

公开(公告)号：US09224616B2

公开(公告)日：2015-12-29

申请号：US14400381

申请日：2013-05-27

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa

IPC: H01L21/308 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3081 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069

Abstract: A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel.

Abstract translation: 蚀刻包含多晶硅的蚀刻目标层的方法包括制备包括蚀刻目标层和形成在蚀刻目标层上的掩模的目标物体; 并用掩模蚀刻蚀刻目标层。 此外，掩模包括由多晶硅形成的第一掩模部分和介于第一掩模部分和蚀刻目标层之间并由氧化硅形成的第二掩模部分。 此外，在蚀刻目标层的蚀刻中，用于蚀刻蚀刻目标层的第一气体，用于除去附着在掩模上的沉积物的第二气体和用于保护第一掩模部分的第三气体被供给到处理容器 其中容纳目标物体，并且在处理容器内产生这些气体的等离子体。