Invention Grant
US09224633B2 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
有权
具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
- Patent Title: Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
- Patent Title (中): 具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
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Application No.: US14340186Application Date: 2014-07-24
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Publication No.: US09224633B2Publication Date: 2015-12-29
- Inventor: Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze , Karsten Kellermann , Michael Sommer , Christian Rottmair , Roland Rupp
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/762 ; H01L21/02 ; H01L21/20 ; C30B25/18 ; H01L21/324
Abstract:
According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.
Public/Granted literature
Information query
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