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发明授权
US09224773B2 Metal shielding layer in backside illumination image sensor chips and methods for forming the same 有权
背面照明图像传感器芯片中的金属屏蔽层及其形成方法

Metal shielding layer in backside illumination image sensor chips and methods for forming the same
摘要：
A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
摘要（中）：

一种器件包括具有正面和背面的半导体衬底。 光敏器件设置在半导体衬底的表面处，其中光敏器件被配置为从半导体衬底的背面接收光信号，并将光信号转换为电信号。 在半导体衬底的背面设有非晶态粘接层。 非晶态粘合层包括氮和金属的化合物。 金属屏蔽层设置在半导体衬底的背面并与非晶态粘合层接触。

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