利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

64 条记录 (耗时 0.018 秒)

    Sensing product and method of making
    2.
    发明授权
    Sensing product and method of making 有权
    感知产品和制作方法

    公开(公告)号：US09419155B2

    公开(公告)日：2016-08-16

    申请号：US13343922

    申请日：2012-01-05

    申请人： Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

    发明人： Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

    IPC分类号： H01L31/0232 ,  H01L31/101 ,  H01L31/18

    CPC分类号： H01L31/0232 ,  H01L31/02327 ,  H01L31/101 ,  H01L31/18

    摘要： This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm.

    摘要翻译： 该描述涉及使用具有多个外延层的基板形成的感测产品。 至少第一外延层具有与第二外延层的组成不同的组成。 感测产品可选地包括第二外延层中的至少一个辐射感测元件以及可选地在第二外延层上的互连结构。 通过去除衬底和除第二外延层之外的所有外延层形成传感产物。 第二外延层的光入射表面具有小于约0.15μm的总厚度变化。

    TOP CAP OF BICYCLE HANDLEBAR STEM TUBE AND METHOD FOR MANUFACTURING SAME
    5.
    发明申请
    TOP CAP OF BICYCLE HANDLEBAR STEM TUBE AND METHOD FOR MANUFACTURING SAME 审中-公开
    自行车手柄管的顶盖及其制造方法

    公开(公告)号：US20130233119A1

    公开(公告)日：2013-09-12

    申请号：US13869952

    申请日：2013-04-24

    申请人： Shih-Chieh CHANG ,  PEPOMAN CO., LTD.

    发明人： Shih-Chieh CHANG ,  Ting-Chi CHANG

    IPC分类号： B62K21/12

    CPC分类号： B62K21/12 ,  B21K1/76 ,  B21K23/04 ,  F16B7/18 ,  F16B37/047 ,  F16B43/009 ,  Y10T74/20822

    摘要： A top cap is provided for a bicycle handlebar stem. The top cap includes a cap body, which has a lower portion forming a fitting cylinder of a reduced diameter and a radially expanding circumferential shoulder atop the fitting cylinder. A barrel extends from a bottom of the fitting cylinder. The barrel forms a downward-facing hollow blind hole. The cap body forms a bolt head hole extending therethrough and coaxial with and communicating the blind hole. The barrel forms slits, which define a tightening section.

    摘要翻译： 为自行车车把杆提供顶盖。 顶盖包括盖体，其具有形成直径减小的配合筒的下部和在配合筒上方的径向扩张的周向肩部。 桶从配件筒的底部延伸。 桶形成向下的空心盲孔。 盖体形成延伸穿过其并与盲孔同轴并连通的螺栓头孔。 桶形成狭缝，其限定了紧固部分。

    Stem fastening structure
    6.
    发明授权
    Stem fastening structure 有权
    茎紧固结构

    公开(公告)号：US08469644B2

    公开(公告)日：2013-06-25

    申请号：US13076004

    申请日：2011-03-30

    申请人： Shih-Chieh Chang

    发明人： Shih-Chieh Chang

    IPC分类号： F16B13/04

    CPC分类号： B62K21/18

    摘要： A stem fastening structure includes a cap, a bolt and a packing member. The cap abuts against a top of a stem and corresponds to a top edge of a middle hole of a front fork. The bolt passes through the cap and penetrates into the middle hole. The packing member has a loop portion for the bolt screwing therethrough. Two sides of the loop portion extend upward and diverge from the other to form two bottom cone portions. Two positioning portions respectively and vertically extend upward from the two positioning portioning. Two top cone portions respectively extend upward from the two positioning portions, and approach the other. A top of each top cone portions abuts against the cap. Thereby, when the bolt drives the loop portion to move toward the cap, the positioning portions abut against the middle hole, so that the stem is fastened to the front fork.

    摘要翻译： 杆紧固结构包括盖，螺栓和填料构件。 帽子抵靠杆的顶部并且对应于前叉的中间孔的顶部边缘。 螺栓穿过盖子并穿透中孔。 包装件具有用于螺栓拧入其中的环部分。 环形部分的两侧向上延伸并且从另一侧分开形成两个底部锥形部分。 两个定位部分分别从两个定位分段向上垂直延伸。 两个顶锥部分别从两个定位部分向上延伸，并相互接近。 每个顶部锥形部分的顶部抵靠盖子。 因此，当螺栓驱动环部朝向盖移动时，定位部抵靠中间孔，使得杆固定在前叉上。

    FAULT-TOLERANT UNIT AND METHOD FOR THROUGH-SILICON VIA
    8.
    发明申请
    FAULT-TOLERANT UNIT AND METHOD FOR THROUGH-SILICON VIA 有权
    耐腐蚀单元和通过硅的方法

    公开(公告)号：US20120248438A1

    公开(公告)日：2012-10-04

    申请号：US13236661

    申请日：2011-09-20

    申请人： Chiao-Ling Lung ,  Yu-Shih Su ,  Shih-Chieh Chang ,  Yiyu Shi

    发明人： Chiao-Ling Lung ,  Yu-Shih Su ,  Shih-Chieh Chang ,  Yiyu Shi

    IPC分类号： H01L23/58 ,  H01L21/66

    CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/16146 ,  H01L2225/06544

    摘要： A fault-tolerant unit and a fault-tolerant method for through-silicon via (TSV) are provided. The fault-tolerant unit includes TSV structures TSV1˜TSVn, nodes N11˜N1n, nodes N21˜N2n and a switching module. The TSV structure TSVi is connected between the node N11 of the first chip and the node N2i of the second chip, wherein 1≦i≦n. The switching module is connected between the nodes N21˜N2n of the second chip and a test path of the second chip. In normal operation state, the switching module disconnects the test path and the nodes N21˜N2n when the TSV structures TSV1˜TSVn are valid. The switching module connects the node N2i to at least another one of the nodes N21˜N2n when the TSV structure TSVi is faulty in the normal operation state. In test status, the switching module connects the test path to the nodes N21˜N2n.

    摘要翻译： 提供了一种容错单元和通过硅通孔（TSV）的容错方法。 容错单元包括TSV结构TSV1〜TSVn，节点N11〜N1n，节点N21〜Nn以及交换模块。 TSV结构TSVi连接在第一芯片的节点N11和第二芯片的节点N2i之间，其中1＆nlE; i＆nlE; n。 切换模块连接在第二芯片的节点N21〜Nn2和第二芯片的测试路径之间。 在正常工作状态下，当TSV结构TSV1〜TSVn有效时，切换模块断开测试路径和节点N21〜N2。 当TSV结构TSVi在正常操作状态下故障时，切换模块将节点N2i连接到节点N21〜Nnn中的至少另一个。 在测试状态下，交换模块将测试路径连接到节点N21〜N2n。

    SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME 有权
    半导体器件接触结构及其制造方法

    公开(公告)号：US20120235299A1

    公开(公告)日：2012-09-20

    申请号：US13049049

    申请日：2011-03-16

    申请人： Shih Chieh CHANG ,  Chih-Chung CHANG ,  Kei-Wei CHEN ,  Ying-Lang WANG

    发明人： Shih Chieh CHANG ,  Chih-Chung CHANG ,  Kei-Wei CHEN ,  Ying-Lang WANG

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L23/53266 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor contact structure and method provide contact structures that extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings.

    摘要翻译： 半导体接触结构和方法提供延伸穿过电介质材料并提供与包括硅化物材料和非硅化物材料例如掺杂硅的多个不同下层材料的接触的接触结构。 接触结构包括使用多步电离金属等离子体（IMP）沉积操作形成的下复合层。 下部IMP膜以高AC偏压功率形成，随后以较低的AC偏压功率形成上部IMP膜。 复合层可以由钛形成。 在复合层上形成另一层作为衬垫，并且衬垫层可以有利地使用CVD形成，并且可以是TiN。 诸如钨或铜的导电插塞材料填充接触开口。

    Via/contact and damascene structures and manufacturing methods thereof
    10.
    发明授权
    Via/contact and damascene structures and manufacturing methods thereof 有权
    通孔/接触和镶嵌结构及其制造方法

    公开(公告)号：US08247322B2

    公开(公告)日：2012-08-21

    申请号：US11680981

    申请日：2007-03-01

    申请人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

    发明人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76831 ,  H01L21/7684

    摘要： A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer.

    摘要翻译： 形成半导体结构的方法包括在衬底上形成电介质层。 在电介质层上形成第一非导电阻挡层。 通过第一非导电阻挡层和介电层内形成至少一个开口。 在第一非导电阻挡层上并在开口内形成第二非导电阻挡层。 去除第二非导电阻挡层的至少一部分，从而至少部分地暴露第一非导电阻挡层的顶表面和开口的底表面，而第二非导电阻挡层保留在侧壁上 的开幕。 然后形成种子层和导电层，并且单次抛光操作去除种子层和导电层。