Invention Grant
US09229828B2 Mechanism for achieving high memory reliability, availability and serviceability 有权
实现高内存可靠性,可用性和可维护性的机制

Mechanism for achieving high memory reliability, availability and serviceability
Abstract:
A mechanism is described for achieving high memory reliability, availability, and serviceability (RAS) according to one embodiment of the invention. A method of embodiments of the invention includes detecting a permanent failure of a first memory device of a plurality of memory devices of a first channel of a memory system at a computing system, and eliminating the first failure by merging a first error-correction code (ECC) locator device of the first channel with a second ECC locator device of a second channel, wherein merging is performed at the second channel.
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