Mechanism for achieving high memory reliability, availability and serviceability
    1.
    发明授权
    Mechanism for achieving high memory reliability, availability and serviceability 有权
    实现高内存可靠性,可用性和可维护性的机制

    公开(公告)号:US09229828B2

    公开(公告)日:2016-01-05

    申请号:US14563761

    申请日:2014-12-08

    CPC classification number: G06F11/2094 G06F11/1044 G06F11/1076 H03M13/05

    Abstract: A mechanism is described for achieving high memory reliability, availability, and serviceability (RAS) according to one embodiment of the invention. A method of embodiments of the invention includes detecting a permanent failure of a first memory device of a plurality of memory devices of a first channel of a memory system at a computing system, and eliminating the first failure by merging a first error-correction code (ECC) locator device of the first channel with a second ECC locator device of a second channel, wherein merging is performed at the second channel.

    Abstract translation: 描述了根据本发明的一个实施例的用于实现高存储器可靠性,可用性和可服务性(RAS)的机制。 本发明的实施例的方法包括:检测在计算系统处的存储器系统的第一通道的多个存储器件的第一存储器件的永久故障,并通过合并第一纠错码来消除第一故障( ECC)具有第二信道的第二ECC定位器装置的第一信道的定位装置,其中在第二信道执行合并。

Patent Agency Ranking