Invention Grant
- Patent Title: Verify or read pulse for phase change memory and switch
- Patent Title (中): 验证或读取相变存储器和开关的脉冲
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Application No.: US14528976Application Date: 2014-10-30
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Publication No.: US09230643B2Publication Date: 2016-01-05
- Inventor: Hernan Castro , Timothy C. Langtry , Richard Dodge , Ilya Karpov
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C13/00

Abstract:
Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.
Public/Granted literature
- US20150055408A1 VERIFY OR READ PULSE FOR PHASE CHANGE MEMORY AND SWITCH Public/Granted day:2015-02-26
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