公开(公告)号：US11205465B2

公开(公告)日：2021-12-21

申请号：US16694133

申请日：2019-11-25

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C8/10 ,  G11C7/10 ,  G11C8/16 ,  G11C5/06 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18 ,  G11C5/02

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US20220101899A1

公开(公告)日：2022-03-31

申请号：US17550668

申请日：2021-12-14

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C8/10 ,  G11C7/10 ,  G11C8/16 ,  G11C5/06 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18 ,  G11C5/02

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US09230643B2

公开(公告)日：2016-01-05

申请号：US14528976

申请日：2014-10-30

Applicant: Micron Technology, Inc.

Inventor： Hernan Castro ,  Timothy C. Langtry ,  Richard Dodge ,  Ilya Karpov

IPC: G11C7/06 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0064 ,  G11C2013/0052

Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.

Abstract translation: 本文公开的实施例可以涉及为相变存储器和开关（PCMS）装置应用验证或读取脉冲。 读取脉冲可以以第一电压施加第一时间段。 可以在感测窗口期间检测相变存储器单元的阈值事件。 感应窗口可以在施加读取脉冲的第一时间段期满之后关闭。

公开(公告)号：US11769538B2

公开(公告)日：2023-09-26

申请号：US17550668

申请日：2021-12-14

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C8/10 ,  G11C7/10 ,  G11C8/16 ,  G11C5/06 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18 ,  G11C5/02

CPC classification number: G11C8/10 ,  G11C5/025 ,  G11C5/063 ,  G11C7/1039 ,  G11C7/18 ,  G11C8/14 ,  G11C8/16 ,  G11C13/003 ,  G11C13/0026 ,  G11C13/0028 ,  G11C2213/71

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US20200090715A1

公开(公告)日：2020-03-19

申请号：US16694133

申请日：2019-11-25

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C8/10 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18 ,  G11C5/02 ,  G11C7/10 ,  G11C8/16 ,  G11C5/06

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US10573362B2

公开(公告)日：2020-02-25

申请号：US15689017

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C13/00 ,  G11C8/10 ,  G11C7/10 ,  G11C8/16 ,  G11C5/06

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US20190066743A1

公开(公告)日：2019-02-28

申请号：US15689017

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Richard K. Dodge ,  Timothy C. Langtry

IPC: G11C8/10 ,  G11C5/06 ,  G11C8/16 ,  G11C7/10

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

公开(公告)号：US20150055408A1

公开(公告)日：2015-02-26

申请号：US14528976

申请日：2014-10-30

Applicant: Micron Technology, Inc.

Inventor： Hernan Castro ,  Timothy C. Langtry ,  Richard Dodge ,  IIya Karpov

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0064 ,  G11C2013/0052

Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.

Abstract translation: 本文公开的实施例可以涉及为相变存储器和开关（PCMS）装置应用验证或读取脉冲。 读取脉冲可以以第一电压施加第一时间段。 可以在感测窗口期间检测相变存储器单元的阈值事件。 感应窗口可以在施加读取脉冲的第一时间段期满之后关闭。