Invention Grant
US09230835B2 Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
有权
用于制造n型金属氧化物半导体(NMOS)器件的集成平台
- Patent Title: Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
- Patent Title (中): 用于制造n型金属氧化物半导体(NMOS)器件的集成平台
-
Application No.: US14211156Application Date: 2014-03-14
-
Publication No.: US09230835B2Publication Date: 2016-01-05
- Inventor: Avgerinos V. Gelatos , Srinivas Gandikota , Seshadri Ganguli , Xinyu Fu , Bo Zheng , Yu Lei
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/67 ; H01L21/285 ; H01L21/28 ; H01L29/49

Abstract:
Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).
Public/Granted literature
- US20140273515A1 INTEGRATED PLATFORM FOR FABRICATING N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) DEVICES Public/Granted day:2014-09-18
Information query
IPC分类: