Invention Grant
US09230974B1 Methods of selective removal of blocking dielectric in NAND memory strings
有权
选择性去除NAND存储器串中的阻塞电介质的方法
- Patent Title: Methods of selective removal of blocking dielectric in NAND memory strings
- Patent Title (中): 选择性去除NAND存储器串中的阻塞电介质的方法
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Application No.: US14468743Application Date: 2014-08-26
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Publication No.: US09230974B1Publication Date: 2016-01-05
- Inventor: Jayavel Pachamuthu , Johann Alsmeier , George Matamis , Henry Chien
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/115
Abstract:
Methods of making a monolithic three dimensional NAND string may enable selective removal of a blocking dielectric material, such as aluminum oxide, without otherwise damaging the device. Blocking dielectric may be selectively removed from the back side (e.g., slit trench) and/or front side (e.g., memory opening) of the NAND string. Also disclosed are NAND strings made in accordance with the embodiment methods.
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