Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14357862Application Date: 2012-11-16
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Publication No.: US09236276B2Publication Date: 2016-01-12
- Inventor: Koji Hashimoto , Masamoto Kawaguchi , Masahiro Honda , Takashige Saito
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2011-263800 20111201
- International Application: PCT/JP2012/007364 WO 20121116
- International Announcement: WO2013/080472 WO 20130606
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/268 ; H01L23/31 ; H01L29/84

Abstract:
In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser. The laser has a wavelength that passes through the semiconductor chip and has a lower absorptivity in the semiconductor chip than in the resin. The laser is applied to the resin from a side adjacent to one of plate surfaces of the semiconductor chip, so that the resin sealing the one of the plate surfaces is sublimated and removed and at least a part of the resin sealing the other of the plate surfaces is subsequently sublimated and removed by the laser having passed through the semiconductor chip.
Public/Granted literature
- US20140315356A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-10-23
Information query
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