公开(公告)号：US09789637B2

公开(公告)日：2017-10-17

申请号：US14414831

申请日：2013-07-10

Applicant: DENSO CORPORATION

Inventor： Ryosuke Izumi ,  Takashige Saito ,  Hiroyuki Okuhira ,  Yuuichi Ikuno ,  Kouji Yamamoto

IPC: B29C45/16 ,  H05K5/00 ,  H05K5/06 ,  B29C43/18 ,  G01L19/14 ,  H01L21/56 ,  H01L23/31 ,  B29C45/14 ,  B29C45/02 ,  B29K101/10 ,  B29K101/12 ,  B29L31/34

CPC classification number: B29C45/16 ,  B29C43/18 ,  B29C45/02 ,  B29C45/14639 ,  B29C45/1657 ,  B29C45/1671 ,  B29C2045/1664 ,  B29K2101/10 ,  B29K2101/12 ,  B29L2031/3481 ,  G01L19/141 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3142 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H05K5/0095 ,  H05K5/065 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An electronic device includes a first molded product integrated with an electronic component, and a second molded product secondarily molded outside of the first molded product. The first molded product includes a thermosetting resin, and a first additive contained in the thermosetting resin, and the second molded product includes a thermoplastic resin, and a second additive contained in the thermoplastic resin and having a reactive group that chemically bonds with the first additive. At an interface between the first molded product and the second molded product, the first additive and the second additive are joined to each other by one or more joint actions selected from covalent bonding, ionic bonding, hydrogen bonding, intermolecular forces, dispersion force, and diffusion. As a result, the adhesion between both the molded products can be firmly secured through the molding technique such as the transfer molding method or the compression molding method.

公开(公告)号：US09236276B2

公开(公告)日：2016-01-12

申请号：US14357862

申请日：2012-11-16

Applicant: DENSO CORPORATION

Inventor： Koji Hashimoto ,  Masamoto Kawaguchi ,  Masahiro Honda ,  Takashige Saito

IPC: H01L21/56 ,  H01L21/268 ,  H01L23/31 ,  H01L29/84

CPC classification number: H01L21/56 ,  H01L21/268 ,  H01L23/3107 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/1815 ,  H01L2924/00

Abstract: In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser. The laser has a wavelength that passes through the semiconductor chip and has a lower absorptivity in the semiconductor chip than in the resin. The laser is applied to the resin from a side adjacent to one of plate surfaces of the semiconductor chip, so that the resin sealing the one of the plate surfaces is sublimated and removed and at least a part of the resin sealing the other of the plate surfaces is subsequently sublimated and removed by the laser having passed through the semiconductor chip.

Abstract translation: 在半导体器件的制造方法中，用树脂密封半导体芯片，然后施加激光以除去树脂，使得半导体芯片的一部分露出。 该半导体芯片由具有比树脂低的激光吸收性并且不被激光熔化的材料制成。 激光器具有穿过半导体芯片的波长并且在半导体芯片中具有比在树脂中更低的吸收率。 将激光从与半导体芯片的一个板表面相邻的一侧施加到树脂上，使得密封该一个板表面的树脂被升华和去除，并且至少一部分树脂密封该板的另一个 随后通过半导体芯片的激光使表面升华和去除。

公开(公告)号：US20150158221A1

公开(公告)日：2015-06-11

申请号：US14414831

申请日：2013-07-10

Applicant: DENSO CORPORATION

Inventor： Ryosuke Izumi ,  Takashige Saito ,  Hiroyuki Okuhira ,  Yuuichi Ikuno ,  Kouji Yamamoto

IPC: B29C45/16 ,  H05K5/00 ,  H05K5/06

CPC classification number: B29C45/16 ,  B29C43/18 ,  B29C45/02 ,  B29C45/14639 ,  B29C45/1657 ,  B29C45/1671 ,  B29C2045/1664 ,  B29K2101/10 ,  B29K2101/12 ,  B29L2031/3481 ,  G01L19/141 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3142 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H05K5/0095 ,  H05K5/065 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An electronic device includes a first molded product integrated with an electronic component, and a second molded product secondarily molded outside of the first molded product. The first molded product includes a thermosetting resin, and a first additive contained in the thermosetting resin, and the second molded product includes a thermoplastic resin, and a second additive contained in the thermoplastic resin and having a reactive group that chemically bonds with the first additive. At an interface between the first molded product and the second molded product, the first additive and the second additive are joined to each other by one or more joint actions selected from covalent bonding, ionic bonding, hydrogen bonding, intermolecular forces, dispersion force, and diffusion. As a result, the adhesion between both the molded products can be firmly secured through the molding technique such as the transfer molding method or the compression molding method.

Abstract translation: 电子设备包括与电子部件一体化的第一模制产品和在第一模制产品外部二次模制的第二模制产品。 第一模制产品包括热固性树脂和包含在热固性树脂中的第一添加剂，第二模塑产品包括热塑性树脂和包含在热塑性树脂中并具有与第一添加剂化学键合的反应性基团的第二添加剂 。 在第一模制产品和第二模制产品之间的界面处，第一添加剂和第二添加剂通过选自共价键，离子键，氢键，分子间力，分散力和 扩散。 结果，通过诸如传递模塑法或压缩模塑法的成型技术，可以牢固地确保两个成型产品之间的粘合性。

公开(公告)号：US20140315356A1

公开(公告)日：2014-10-23

申请号：US14357862

申请日：2012-11-16

Applicant: DENSO CORPORATION

Inventor： Koji Hashimoto ,  Masamoto Kawaguchi ,  Masahiro Honda ,  Takashige Saito

IPC: H01L21/56 ,  H01L21/268

CPC classification number: H01L21/56 ,  H01L21/268 ,  H01L23/3107 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/1815 ,  H01L2924/00

Abstract: In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser. The laser has a wavelength that passes through the semiconductor chip and has a lower absorptivity in the semiconductor chip than in the resin. The laser is applied to the resin from a side adjacent to one of plate surfaces of the semiconductor chip, so that the resin sealing the one of the plate surfaces is sublimated and removed and at least a part of the resin sealing the other of the plate surfaces is subsequently sublimated and removed by the laser having passed through the semiconductor chip.

Abstract translation: 在半导体器件的制造方法中，用树脂密封半导体芯片，然后施加激光以除去树脂，使得半导体芯片的一部分露出。 该半导体芯片由具有比树脂低的激光吸收性并且不被激光熔化的材料制成。 激光器具有穿过半导体芯片的波长并且在半导体芯片中具有比在树脂中更低的吸收率。 将激光从与半导体芯片的一个板表面相邻的一侧施加到树脂上，使得密封该一个板表面的树脂被升华和去除，并且至少一部分树脂密封该板的另一个 随后通过半导体芯片的激光使表面升华和去除。