公开(公告)号：US20140315356A1

公开(公告)日：2014-10-23

申请号：US14357862

申请日：2012-11-16

Applicant: DENSO CORPORATION

Inventor： Koji Hashimoto ,  Masamoto Kawaguchi ,  Masahiro Honda ,  Takashige Saito

IPC: H01L21/56 ,  H01L21/268

CPC classification number: H01L21/56 ,  H01L21/268 ,  H01L23/3107 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/1815 ,  H01L2924/00

Abstract: In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser. The laser has a wavelength that passes through the semiconductor chip and has a lower absorptivity in the semiconductor chip than in the resin. The laser is applied to the resin from a side adjacent to one of plate surfaces of the semiconductor chip, so that the resin sealing the one of the plate surfaces is sublimated and removed and at least a part of the resin sealing the other of the plate surfaces is subsequently sublimated and removed by the laser having passed through the semiconductor chip.

Abstract translation: 在半导体器件的制造方法中，用树脂密封半导体芯片，然后施加激光以除去树脂，使得半导体芯片的一部分露出。 该半导体芯片由具有比树脂低的激光吸收性并且不被激光熔化的材料制成。 激光器具有穿过半导体芯片的波长并且在半导体芯片中具有比在树脂中更低的吸收率。 将激光从与半导体芯片的一个板表面相邻的一侧施加到树脂上，使得密封该一个板表面的树脂被升华和去除，并且至少一部分树脂密封该板的另一个 随后通过半导体芯片的激光使表面升华和去除。

公开(公告)号：US09236276B2

公开(公告)日：2016-01-12

申请号：US14357862

申请日：2012-11-16

Applicant: DENSO CORPORATION

Inventor： Koji Hashimoto ,  Masamoto Kawaguchi ,  Masahiro Honda ,  Takashige Saito

IPC: H01L21/56 ,  H01L21/268 ,  H01L23/31 ,  H01L29/84

CPC classification number: H01L21/56 ,  H01L21/268 ,  H01L23/3107 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/1815 ,  H01L2924/00

Abstract: In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser. The laser has a wavelength that passes through the semiconductor chip and has a lower absorptivity in the semiconductor chip than in the resin. The laser is applied to the resin from a side adjacent to one of plate surfaces of the semiconductor chip, so that the resin sealing the one of the plate surfaces is sublimated and removed and at least a part of the resin sealing the other of the plate surfaces is subsequently sublimated and removed by the laser having passed through the semiconductor chip.

Abstract translation: 在半导体器件的制造方法中，用树脂密封半导体芯片，然后施加激光以除去树脂，使得半导体芯片的一部分露出。 该半导体芯片由具有比树脂低的激光吸收性并且不被激光熔化的材料制成。 激光器具有穿过半导体芯片的波长并且在半导体芯片中具有比在树脂中更低的吸收率。 将激光从与半导体芯片的一个板表面相邻的一侧施加到树脂上，使得密封该一个板表面的树脂被升华和去除，并且至少一部分树脂密封该板的另一个 随后通过半导体芯片的激光使表面升华和去除。