Invention Grant
US09236381B2 Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element
有权
非易失性存储元件，非易失性存储装置，非易失性半导体装置以及制造非易失性存储元件的方法
- Patent Title: Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element
- Patent Title (中): 非易失性存储元件，非易失性存储装置，非易失性半导体装置以及制造非易失性存储元件的方法
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Application No.: US12307032Application Date: 2007-10-24
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Publication No.: US09236381B2Publication Date: 2016-01-12
- Inventor: Satoru Fujii , Takeshi Takagi , Shunsaku Muraoka , Koichi Osano , Kazuhiko Shimakawa
- Applicant: Satoru Fujii , Takeshi Takagi , Shunsaku Muraoka , Koichi Osano , Kazuhiko Shimakawa
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-311910 20061117
- International Application: PCT/JP2007/070751 WO 20071024
- International Announcement: WO2008/059701 WO 20080522
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/10 ; G11C13/00 ; H01L27/24 ; H01L45/00
Abstract:
A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103), (105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0
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