Invention Grant
- Patent Title: Atomic layer deposition of hafnium or zirconium alloy films
- Patent Title (中): 原子层沉积铪或锆合金膜
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Application No.: US14183826Application Date: 2014-02-19
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Publication No.: US09236467B2Publication Date: 2016-01-12
- Inventor: Timothy W. Weidman , Timothy Michaelson , Paul F. Ma , Paul Deaton
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; C23C16/18 ; C23C16/455 ; H01L21/28 ; H01L29/49 ; H01L21/285 ; H01L21/768
Abstract:
Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.
Public/Granted literature
- US20140231930A1 Atomic Layer Deposition of Hafnium or Zirconium Alloy Films Public/Granted day:2014-08-21
Information query
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