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    Vapor Deposition Deposited Photoresist, And Manufacturing And Lithography Systems Therefor
    1.
    发明申请
    Vapor Deposition Deposited Photoresist, And Manufacturing And Lithography Systems Therefor 有权
    气相沉积光致抗蚀剂及其制造和光刻系统

    公开(公告)号：US20170068174A1

    公开(公告)日：2017-03-09

    申请号：US15357085

    申请日：2016-11-21

    申请人： Applied Materials, Inc.

    发明人： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

    摘要： A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

    摘要翻译： 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

    Atomic layer deposition of hafnium or zirconium alloy films
    2.
    发明授权
    Atomic layer deposition of hafnium or zirconium alloy films 有权
    原子层沉积铪或锆合金膜

    公开(公告)号：US09236467B2

    公开(公告)日：2016-01-12

    申请号：US14183826

    申请日：2014-02-19

    申请人： Applied Materials, Inc.

    发明人： Timothy W. Weidman ,  Timothy Michaelson ,  Paul F. Ma ,  Paul Deaton

    IPC分类号： H01L29/78 ,  C23C16/18 ,  C23C16/455 ,  H01L21/28 ,  H01L29/49 ,  H01L21/285 ,  H01L21/768

    CPC分类号： H01L29/78 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76871 ,  H01L29/4966

    摘要： Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.

    摘要翻译： 提供了沉积含铪或锆的金属合金膜的方法。 某些方法包括将衬底表面依次暴露于有机金属前体和包含M（BH 4）4的还原剂的交替流，以在衬底表面上产生金属合金膜，其中M选自铪和锆，并且有机金属前体含有 描述了包括包含硼的铜阻挡层，选自Hf和Zr的第一金属M和选自钽，钨，铜，钌，铑，钴和镍的第二金属N的栅叠层。 以及覆盖在铜屏障种子层上的铜层。

    VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
    3.
    发明申请
    VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR 有权
    蒸发沉积物沉积光电子体及其制造和光刻系统

    公开(公告)号：US20140268082A1

    公开(公告)日：2014-09-18

    申请号：US14139457

    申请日：2013-12-23

    申请人： Applied Materials, Inc.

    发明人： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

    IPC分类号： G03F7/16 ,  G03F7/09

    CPC分类号： G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

    摘要： A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

    摘要翻译： 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。