Invention Grant
US09236564B2 Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer
有权
用于提供包括Heusler层和非晶体插入层的工程磁性层的方法和系统
- Patent Title: Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer
- Patent Title (中): 用于提供包括Heusler层和非晶体插入层的工程磁性层的方法和系统
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Application No.: US14478963Application Date: 2014-09-05
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Publication No.: US09236564B2Publication Date: 2016-01-12
- Inventor: Matthew J. Carey , Keith Chan , Roman Chepulskyy
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11B5/39 ; H01L43/12 ; H01L43/10
Abstract:
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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