Invention Grant
- Patent Title: Leakage-current start-up reference circuit
- Patent Title (中): 漏电流启动参考电路
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Application No.: US14286831Application Date: 2014-05-23
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Publication No.: US09239586B2Publication Date: 2016-01-19
- Inventor: Chao-Jen Huang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/16 ; G05F3/26

Abstract:
A leakage-current start-up reference circuit is provided which includes a reference circuit unit, a trigger unit, a leakage-current generator and a disable control unit. The trigger unit includes a first transistor. The drain terminal of the trigger unit is connected to a start-up terminal of the reference circuit unit. The leakage-current generator includes a second transistor which is a gate-drain-tied transistor. The disable control unit includes a third transistor. The gate terminal of the disable control unit is connected to a control terminal of the reference circuit unit. The drain terminal of the leakage-current generator, the gate terminal of the trigger unit and the drain terminal of the disable control unit are joined at a node. The reference circuit unit is started up by the trigger unit to generate a reference current. A leakage-current start-up reference circuit having a current mirror is also provided.
Public/Granted literature
- US20150153758A1 LEAKAGE-CURRENT START-UP REFERENCE CIRCUIT Public/Granted day:2015-06-04
Information query
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