Invention Grant
- Patent Title: Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device
- Patent Title (中): 使用刀刃在晶片级进行光斑尺寸测量的装置及其制造方法
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Application No.: US14373893Application Date: 2012-12-05
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Publication No.: US09240306B2Publication Date: 2016-01-19
- Inventor: Jan Andries Meijer , Paul IJmert Scheffers , Abdourahmane Ange Sarr
- Applicant: Mapper Lithography IP B.V.
- Applicant Address: NL Delft
- Assignee: MAPPER LITHOGRAPHY IP B.V.
- Current Assignee: MAPPER LITHOGRAPHY IP B.V.
- Current Assignee Address: NL Delft
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Priority: NL2008174 20120124
- International Application: PCT/NL2012/050854 WO 20121205
- International Announcement: WO2013/112041 WO 20130801
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/252 ; H01J37/09 ; H01J37/244 ; H01J37/30 ; H01J37/317 ; B82Y10/00 ; B82Y40/00
Abstract:
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.
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