公开(公告)号：US09240306B2

公开(公告)日：2016-01-19

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdourahmane Ange Sarr

IPC: H01J37/00 ,  H01J37/252 ,  H01J37/09 ,  H01J37/244 ,  H01J37/30 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。

公开(公告)号：US20150001423A1

公开(公告)日：2015-01-01

申请号：US14373893

申请日：2012-12-05

Applicant: Mapper Lithography IP B.V.

Inventor： Jan Andries Meijer ,  Paul IJmert Scheffers ,  Abdou Sarr

IPC: H01J37/252 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

Abstract: The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

Abstract translation: 本发明涉及一种用于在多带电粒子束光刻系统中在晶片级进行点尺寸测量的装置。 该装置包括在闪烁材料的顶部上的刀刃结构，例如YAG材料。 刀刃结构布置在Si晶片中，其具有与Si的（110）平面成锐角的顶面。 在一个实施例中，角度在2至4度的范围内，优选在2.9-3.1度的范围内。 本发明还涉及一种用于在多带电粒子束光刻系统中制造用于晶片级的点尺寸测量的装置的方法。

公开(公告)号：US09665014B2

公开(公告)日：2017-05-30

申请号：US14383569

申请日：2013-03-08

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Paul Ijmert Scheffers ,  Jan Andries Meijer ,  Erwin Slot ,  Vincent Sylvester Kuiper ,  Niels Vergeer

IPC: H01J37/09 ,  H01J37/16 ,  G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/707 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/1501 ,  H01J2237/1502 ,  H01J2237/3045

Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.

公开(公告)号：US20150179398A1

公开(公告)日：2015-06-25

申请号：US14581728

申请日：2014-12-23

Applicant: Mapper Lithography IP B.V.

Inventor： Paul IJmert Scheffers ,  Jan Andries Meijer ,  Carel Ferdinand Daudey

IPC: H01J37/22 ,  H01J37/20

CPC classification number: H01J37/22 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3177 ,  H01J2237/10 ,  H01J2237/202 ,  H01J2237/2443 ,  H01J2237/24507

Abstract: The invention relates to a charged particle lithography system for transferring a pattern onto a target, said system comprising:a target positioning device comprising a target holder having a first side for holding the target,a charged particle optical unit for generating a charged particle beam, modulating said charged particle beam, and directing said charged particle beam towards the first side of the target holder, anda sensor assembly comprising a converter element for converting charged particles which impinge on said converter element into light, wherein the converter element is arranged on said target positioning device, a light sensor for detecting the light, wherein the light sensor is arranged at a distance from said target positioning device, and a light optical lens which is arranged between the converter element and the light sensor for directing light originating from said converter element to said sensor.

Abstract translation: 本发明涉及一种用于将图案转印到目标上的带电粒子光刻系统，所述系统包括：目标定位装置，包括具有用于保持靶的第一侧的靶保持器，用于产生带电粒子束的带电粒子光学单元， 调制所述带电粒子束，并将所述带电粒子束引向所述目标保持器的第一侧;以及传感器组件，其包括用于将撞击在所述转换器元件上的带电粒子转换成光的转换器元件，其中所述转换器元件布置在所述 目标定位装置，用于检测光的光传感器，其中所述光传感器布置在距所述目标定位装置一定距离处;以及光学透镜，布置在所述转换器元件和所述光传感器之间，用于引导源自所述转换器的光 元件到所述传感器。

公开(公告)号：US20150109601A1

公开(公告)日：2015-04-23

申请号：US14383569

申请日：2013-03-08

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Paul IJmert Scheffers ,  Jan Andries Meijer ,  Erwin Slot ,  Vincent Sylvester Kuiper ,  Niels Vergeer

IPC: G03F7/20

CPC classification number: G03F7/707 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/1501 ,  H01J2237/1502 ,  H01J2237/3045

Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.

Abstract translation: 一种用于将图案转印到基板表面的多子束带电粒子光束光刻系统。 该系统包括用于将多个带电粒子子束（7）投影到衬底的表面上的投影系统（311） 相对于投影系统可移动的卡盘（313）; 用于确定一个或多个带电粒子子束的一个或多个特征的小波束测量传感器（即505,511），所述小束测量传感器具有用于接收一个或多个带电粒子子束的表面（501） 以及用于测量位置标记（610,620,635）的位置的位置标记测量系统，所述位置标记测量系统包括对准传感器（361,362）。 卡盘包括用于支撑基板的基板支撑部分，用于容纳小梁测量传感器的表面的小梁测量传感器部分（460）和用于容纳位置标记的位置标记部分（470）。