Invention Grant
- Patent Title: Semiconductor process
- Patent Title (中): 半导体工艺
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Application No.: US13773635Application Date: 2013-02-22
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Publication No.: US09240459B2Publication Date: 2016-01-19
- Inventor: Kuang-Hung Huang , Jie-Ning Yang , Yao-Chang Wang , Chi-Sheng Tseng , Po-Jui Liao , Shih-Chang Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/768 ; H01L29/49 ; H01L29/51
Abstract:
A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.
Public/Granted literature
- US20140242770A1 SEMICONDUCTOR PROCESS Public/Granted day:2014-08-28
Information query
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