Invention Grant
- Patent Title: SRAM memory device and testing method thereof
- Patent Title (中): SRAM存储器件及其测试方法
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Application No.: US13682592Application Date: 2012-11-20
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Publication No.: US09245606B2Publication Date: 2016-01-26
- Inventor: Danilo Rimondi , Carolina Selva , Ashish Kumar
- Applicant: STMicroelectronics PVT LTD. , STMicroelectronics S.r.l.
- Applicant Address: NL Amsterdam IT Agrate Brianza
- Assignee: STMICROELECTRONICS INTERNATIONAL N.V.,STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS INTERNATIONAL N.V.,STMICROELECTRONICS S.R.L.
- Current Assignee Address: NL Amsterdam IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2011A001080 20111123
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/413 ; G11C7/20 ; G11C7/22 ; G11C29/12 ; G11C29/24 ; G11C11/41

Abstract:
A static random access memory (SRAM) device includes a memory array of a plurality of memory cells, a controller that receives an external clock signal formed by a succession of external pulses and generates an internal clock signal formed by a succession of internal pulses, and a driving circuit that receives the internal clock signal. The controller is operable in a first mode, wherein the controller generates, for each external pulse, a corresponding internal pulse and the controller controls the driving circuit so that the driving circuitry carries out one access to the memory array for each internal pulse. The controller is further operable in a second mode, wherein the controller generates, for each external pulse, a pair of internal pulses, and the controller controls the driving circuitry so that, for each pair of internal pulses, the driving circuitry writes a first data item in a set of memory cells, and then reads the set of memory cells, so as to acquire a second data item.
Public/Granted literature
- US20130128656A1 SRAM MEMORY DEVICE AND TESTING METHOD THEREOF Public/Granted day:2013-05-23
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