Invention Grant
US09245624B2 Memory device including a SRAM memory plane and a non volatile memory plane, and operating methods
有权
存储器件包括SRAM存储器平面和非易失性存储器平面以及操作方法
- Patent Title: Memory device including a SRAM memory plane and a non volatile memory plane, and operating methods
- Patent Title (中): 存储器件包括SRAM存储器平面和非易失性存储器平面以及操作方法
-
Application No.: US14298264Application Date: 2014-06-06
-
Publication No.: US09245624B2Publication Date: 2016-01-26
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1355439 20130612
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C16/10
Abstract:
A memory device includes at least one memory cell having a first SRAM-type elementary memory cell having two inverters coupled to one another crosswise and two groups, each having at least one non-volatile elementary memory cell. The non-volatile elementary memory cells of the two groups are coupled firstly to a supply terminal and secondly to the outputs and to the inputs of the two inverters via a controllable interconnection stage.
Public/Granted literature
- US20140369120A1 Memory Device Including a SRAM Memory Plane and a Non Volatile Memory Plane, and Operating Methods Public/Granted day:2014-12-18
Information query
