Invention Grant
US09245769B2 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
有权
使用等离子体预处理和高温蚀刻剂沉积的方向SiO 2蚀刻
- Patent Title: Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
- Patent Title (中): 使用等离子体预处理和高温蚀刻剂沉积的方向SiO 2蚀刻
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Application No.: US14466808Application Date: 2014-08-22
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Publication No.: US09245769B2Publication Date: 2016-01-26
- Inventor: David T. Or , Joshua Collins , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/326 ; H01L21/311 ; H01L21/02
Abstract:
Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.
Public/Granted literature
- US20150072508A1 DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION Public/Granted day:2015-03-12
Information query
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