发明授权
US09245881B2 Selective fabrication of high-capacitance insulator for a metal-oxide-metal capacitor
有权
用于金属氧化物 - 金属电容器的高容量绝缘体的选择性制造
- 专利标题： Selective fabrication of high-capacitance insulator for a metal-oxide-metal capacitor
- 专利标题（中）： 用于金属氧化物 - 金属电容器的高容量绝缘体的选择性制造
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申请号： US12405303申请日： 2009-03-17
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公开(公告)号： US09245881B2公开(公告)日： 2016-01-26
- 发明人: Woo Tag Kang , Jonghae Kim , Jungwon Suh
- 申请人： Woo Tag Kang , Jonghae Kim , Jungwon Suh
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Xiaotun Qiu
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L27/08 ; G06F17/50
摘要：
Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.
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