Selective fabrication of high-capacitance insulator for a metal-oxide-metal capacitor
    1.
    发明授权
    Selective fabrication of high-capacitance insulator for a metal-oxide-metal capacitor 有权
    用于金属氧化物 - 金属电容器的高容量绝缘体的选择性制造

    公开(公告)号:US09245881B2

    公开(公告)日:2016-01-26

    申请号:US12405303

    申请日:2009-03-17

    IPC分类号: H01L49/02 H01L27/08 G06F17/50

    摘要: Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.

    摘要翻译: 公开了具有增加的电容的半导体器件中的电容器的方法和装置。 在特定实施例中,公开了形成电容器的方法。 在第一金属接触元件和第二金属接触元件之间的第一绝缘材料的一部分被去除以形成通道。 在第一金属接触元件和第二金属接触元件之间的通道中沉积第二绝缘材料。

    Selective Fabrication of High-Capacitance Insulator for a Metal-Oxide-Metal Capacitor
    2.
    发明申请
    Selective Fabrication of High-Capacitance Insulator for a Metal-Oxide-Metal Capacitor 有权
    金属氧化物 - 金属电容器的高电容绝缘体的选择性制造

    公开(公告)号:US20100237463A1

    公开(公告)日:2010-09-23

    申请号:US12405303

    申请日:2009-03-17

    摘要: Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.

    摘要翻译: 公开了具有增加的电容的半导体器件中的电容器的方法和装置。 在特定实施例中,公开了形成电容器的方法。 在第一金属接触元件和第二金属接触元件之间的第一绝缘材料的一部分被去除以形成通道。 在第一金属接触元件和第二金属接触元件之间的通道中沉积第二绝缘材料。

    Composite piezoelectric laterally vibrating resonator
    3.
    发明授权
    Composite piezoelectric laterally vibrating resonator 有权
    复合压电横向振动谐振器

    公开(公告)号:US09406865B2

    公开(公告)日:2016-08-02

    申请号:US13587618

    申请日:2012-08-16

    摘要: A resonator is described. The resonator includes multiple electrodes. The resonator also includes a composite piezoelectric material. The composite piezoelectric material includes at least one layer of a first piezoelectric material and at least one layer of a second piezoelectric material. At least one electrode is coupled to a bottom of the composite piezoelectric material. At least one electrode is coupled to a top of the composite piezoelectric material.

    摘要翻译: 描述谐振器。 谐振器包括多个电极。 谐振器还包括复合压电材料。 复合压电材料包括至少一层第一压电材料和至少一层第二压电材料。 至少一个电极耦合到复合压电材料的底部。 至少一个电极耦合到复合压电材料的顶部。

    Three dimensional inductor, transformer and radio frequency amplifier
    5.
    发明授权
    Three dimensional inductor, transformer and radio frequency amplifier 有权
    三维电感,变压器和射频放大器

    公开(公告)号:US08508301B2

    公开(公告)日:2013-08-13

    申请号:US13294351

    申请日:2011-11-11

    IPC分类号: H03F3/14

    摘要: A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground.

    摘要翻译: 公开了一种三维片上射频放大器,其包括第一和第二变压器和第一晶体管。 第一变压器包括第一和第二电感耦合电感器。 第二变压器包括第三和第四电感耦合电感器。 每个电感器包括在第一金属层中的多个第一段; 第二金属层中的多个第二段; 第一和第二输入以及耦合第一和第二段的多通孔,以形成第一和第二输入之间的连续路径。 第一电感器的第一输入耦合到放大器输入端; 第二电感器的第一输入耦合到第一晶体管栅极; 第三电感器的第一输入耦合到第一晶体管漏极,第四电感器的第一输入耦合到放大器输出端。 第二电感器输入和第一晶体管源耦合到地。

    PIEZOELECTRIC MEMS TRANSFORMER
    6.
    发明申请
    PIEZOELECTRIC MEMS TRANSFORMER 审中-公开
    压电MEMS变压器

    公开(公告)号:US20130134838A1

    公开(公告)日:2013-05-30

    申请号:US13305293

    申请日:2011-11-28

    IPC分类号: H01L41/107 H01L41/22

    摘要: This disclosure provides implementations of electromechanical systems piezoelectric resonator transformers, devices, apparatus, systems, and related processes. In one aspect, a transformer includes a piezoelectric layer; a first conductive layer arranged over a first surface of the piezoelectric layer including a first set of electrodes and a second set of electrodes interdigitated with the first set. The transformer includes a second conductive layer arranged over a second surface including at least a third set of electrodes. In some implementations, the transformer includes a first port capable of receiving an input signal and to which the first set of electrodes are coupled, and a second port capable of being coupled to a load and of outputting an output signal, the second set of electrodes being coupled to the second port. Generally, a ratio of the number of electrodes of the second set to the first set characterizes a transformation ratio.

    摘要翻译: 本公开提供了机电系统压电谐振器变压器,装置,装置,系统和相关过程的实现。 一方面,变压器包括压电层; 布置在压电层的第一表面上的第一导电层,包括第一组电极和与第一组交叉的第二组电极。 变压器包括布置在包括至少第三组电极的第二表面上的第二导电层。 在一些实施方式中,变压器包括能够接收输入信号并且第一组电极被耦合的第一端口和能够耦合到负载并输出输出信号的第二端口,第二组电极 耦合到第二端口。 通常,第二组的电极数与第一组的比例表示变换比。

    STACKED CMOS CHIPSET HAVING AN INSULATING LAYER AND A SECONDARY LAYER AND METHOD OF FORMING SAME
    7.
    发明申请
    STACKED CMOS CHIPSET HAVING AN INSULATING LAYER AND A SECONDARY LAYER AND METHOD OF FORMING SAME 有权
    具有绝缘层和二次层的堆叠CMOS芯片及其形成方法

    公开(公告)号:US20130120951A1

    公开(公告)日:2013-05-16

    申请号:US13356717

    申请日:2012-01-24

    CPC分类号: H01L27/0688 H01L2224/18

    摘要: A chipset includes a sheet of glass, quartz or sapphire and a first wafer having at least one first circuit layer on a first side of a first substrate layer. The first wafer is connected to the sheet such that the at least one first circuit layer is located between the first substrate layer and the sheet. A second wafer having at least one second circuit layer on a first side of a second substrate layer is connected to the first substrate layer such that the at least one second circuit layer is located between the second substrate layer and the first substrate layer. Also a method of forming a chipset.

    摘要翻译: 芯片组包括玻璃板,石英或蓝宝石片,以及在第一基底层的第一面上具有至少一个第一电路层的第一晶片。 第一晶片连接到片材,使得至少一个第一电路层位于第一基片层和片之间。 具有在第二衬底层的第一侧上的至少一个第二电路层的第二晶片连接到第一衬底层,使得至少一个第二电路层位于第二衬底层和第一衬底层之间。 还有一种形成芯片组的方法。

    PIEZOELECTRIC RESONATOR HAVING COMBINED THICKNESS AND WIDTH VIBRATIONAL MODES
    9.
    发明申请
    PIEZOELECTRIC RESONATOR HAVING COMBINED THICKNESS AND WIDTH VIBRATIONAL MODES 有权
    具有组合厚度和宽度振动模式的压电谐振器

    公开(公告)号:US20130076209A1

    公开(公告)日:2013-03-28

    申请号:US13241356

    申请日:2011-09-23

    摘要: A method and apparatus for a piezoelectric resonator having combined thickness and width vibrational modes are disclosed. A piezoelectric resonator may include a piezoelectric substrate and a first electrode coupled to a first surface of the piezoelectric substrate. The piezoelectric resonator may further include a second electrode coupled to a second surface of the piezoelectric substrate, where the first surface and the second surface are substantially parallel and define a thickness dimension of the piezoelectric substrate. Furthermore, the thickness dimension and the width dimension of the piezoelectric substrate are configured to produce a resonance from a coherent combination of a thickness vibrational mode and a width vibrational mode when an excitation signal is applied to the electrodes.

    摘要翻译: 公开了一种具有组合的厚度和宽度振动模式的压电谐振器的方法和装置。 压电谐振器可以包括压电衬底和耦合到压电衬底的第一表面的第一电极。 压电谐振器还可以包括耦合到压电基板的第二表面的第二电极,其中第一表面和第二表面基本平行并且限定压电基板的厚度尺寸。 此外,压电基板的厚度尺寸和宽度尺寸被构造成当激励信号施加到电极时,从厚度振动模式和宽度振动模式的相干组合产生谐振。

    Through via inductor or transformer in a high-resistance substrate with programmability
    10.
    发明授权
    Through via inductor or transformer in a high-resistance substrate with programmability 有权
    通过电感或变压器在高电阻基板上具有可编程性

    公开(公告)号:US08384507B2

    公开(公告)日:2013-02-26

    申请号:US12791023

    申请日:2010-06-01

    IPC分类号: H01F5/00

    摘要: A through via inductor or transformer in a high-resistance substrate in an electronic package. In one embodiment, the package comprises a target inductor which includes a through-via formed in the substrate through which a signal passes and a tuner inductor which includes a through-via formed in the substrate such that the through-via has an independent signal passing therethrough. The direction of the signal passing through the tuner inductor can be independently controlled to adjust the total inductance of the target inductor. In another embodiment, a transformer can comprise a primary loop and a secondary loop, each of which includes a plurality of through-vias that are coupled to a plurality of conductive traces. The primary loop forms a first continuous conductive path and the secondary loop forms a second continuous conductive path. A signal passing through the primary loop can induce a signal in the secondary loop such that the induced signal is dependent on the transformer ratio.

    摘要翻译: 电子封装中的高电阻基板中的通孔电感器或变压器。 在一个实施例中,封装包括目标电感器,其包括形成在基板中的通孔,信号通过该通孔,以及调谐器电感器,其包括形成在基板中的通孔,使得通孔具有独立的信号通过 通过。 可以独立地控制通过调谐器电感器的信号的方向来调节目标电感器的总电感。 在另一个实施例中,变压器可以包括主回路和次级回路,每个回路包括耦合到多个导电迹线的多个通孔。 主回路形成第一连续导电路径,次级环形成第二连续导电路径。 通过主回路的信号可以在次级回路中感应出信号,使感应信号取决于变压器的比例。