发明授权
- 专利标题： Insulated gate semiconductor device structure
- 专利标题（中）： 绝缘栅半导体器件结构
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申请号： US14514017申请日： 2014-10-14
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公开(公告)号： US09245963B2公开(公告)日： 2016-01-26
- 发明人: Peter A Burke , Gordon M Grivna , Balaji Padmanabhan , Prasad Venkatraman
- 申请人： Semiconductor Components Industries, LLC
- 申请人地址： US AZ Phoenix
- 专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址： US AZ Phoenix
- 代理商 Kevin B. Jackson
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/423 ; H01L29/40 ; H01L29/78 ; H01L29/739 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/08
摘要：
In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
公开/授权文献
- US20150028414A1 INSULATED GATE SEMICONDUCTOR DEVICE STRUCTURE 公开/授权日：2015-01-29
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