Invention Grant
- Patent Title: Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same
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Application No.: US14564928Application Date: 2014-12-09
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Publication No.: US09246048B2Publication Date: 2016-01-26
- Inventor: Su-hee Chae , Young-soo Park , Bok-ki Min , Jun-youn Kim , Hyun-gi Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0071976 20100726
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/38 ; H01L33/12 ; H01L33/24 ; H01L33/22 ; H01L33/40

Abstract:
Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
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