公开(公告)号：US09793432B2

公开(公告)日：2017-10-17

申请号：US14955981

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Youn Kim ,  Bok-ki Min ,  Hyun-gi Hong ,  Jae-won Lee

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/12 ,  B82Y20/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  Y10S977/893 ,  Y10S977/95

Abstract: Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.

公开(公告)号：US08871544B2

公开(公告)日：2014-10-28

申请号：US14067185

申请日：2013-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/32 ,  H01L27/15 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/0025 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract translation: 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。

公开(公告)号：US09246048B2

公开(公告)日：2016-01-26

申请号：US14564928

申请日：2014-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-hee Chae ,  Young-soo Park ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/12 ,  H01L33/24 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016

Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

公开(公告)号：US08877652B2

公开(公告)日：2014-11-04

申请号：US14146233

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-youn Kim ,  Su-hee Chae ,  Hyun-gi Hong ,  Young-jo Tak

IPC: H01L33/12 ,  H01L21/02 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/0079 ,  H01L33/12 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/32341

Abstract: A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.