Invention Grant
US09246057B2 Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
有权
具有包括InGaN的有源区的半导体结构，形成这种半导体结构的方法以及由这种半导体结构形成的发光器件
- Patent Title: Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
- Patent Title (中): 具有包括InGaN的有源区的半导体结构，形成这种半导体结构的方法以及由这种半导体结构形成的发光器件
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Application No.: US14211590Application Date: 2014-03-14
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Publication No.: US09246057B2Publication Date: 2016-01-26
- Inventor: Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
- Applicant: Soitec
- Applicant Address: FR Crolles
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Crolles
- Agency: TraskBritt
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32 ; H01L33/00 ; H01L33/04 ; H01L33/16
Abstract:
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
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