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1.发明申请SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES 有权具有包括氮化镓的活性区域的半导体结构，形成这样的半导体结构的方法和相关的发光器件公开(公告)号：US20160126410A1
公开(公告)日：2016-05-05
申请号：US14991100
申请日：2016-01-08
Applicant: Soitec
Inventor： Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
CPC classification number: H01L33/06 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/145 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
Abstract translation: 半导体结构包括多层InGaN之间的有源区。 有源区可以至少基本上由InGaN组成。 多层InGaN包括至少一个包含InwGa1-wN的阱层和至少一个包含接近至少一个阱层的InbGa1-bN的势垒层。 在一些实施例中，阱层的InwGa1-wN中的w的值在一些实施例中可以大于或等于约0.10且小于或等于约0.40，并且在InbGa1-bN中的b的值在 至少一个阻挡层可以大于或等于约0.01且小于或等于约0.10。 形成半导体结构的方法包括生长这样的InGaN层以形成诸如LED的发光器件的有源区。 照明装置包括这样的LED。
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公开(公告)号：US20140264408A1
公开(公告)日：2014-09-18
申请号：US14211590
申请日：2014-03-14
Applicant: Soitec
Inventor： Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
IPC: H01L33/32 , H01L33/00 , H01L29/20 , H01L29/205 , H01L21/02
CPC classification number: H01L33/06 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/145 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
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公开(公告)号：US09634182B2
公开(公告)日：2017-04-25
申请号：US14991100
申请日：2016-01-08
Applicant: Soitec
Inventor： Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
CPC classification number: H01L33/06 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/145 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
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4.发明授权Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures 有权具有包括InGaN的有源区的半导体结构，形成这种半导体结构的方法以及由这种半导体结构形成的发光器件公开(公告)号：US09246057B2
公开(公告)日：2016-01-26
申请号：US14211590
申请日：2014-03-14
Applicant: Soitec
Inventor： Jean-Philippe Debray , Chantal Arena , Heather McFavilen , Ding Ding , Li Huang
CPC classification number: H01L33/06 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/145 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.
Abstract translation: 半导体结构包括多层InGaN之间的有源区。 有源区可以至少基本上由InGaN组成。 多层InGaN包括至少一个包含InwGa1-wN的阱层和至少一个包含接近至少一个阱层的InbGa1-bN的势垒层。 在一些实施例中，阱层的InwGa1-wN中的w的值在一些实施例中可以大于或等于约0.10且小于或等于约0.40，并且在InbGa1-bN中的b的值在 至少一个阻挡层可以大于或等于约0.01且小于或等于约0.10。 形成半导体结构的方法包括生长这样的InGaN层以形成诸如LED的发光器件的有源区。 照明装置包括这样的LED。
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