Invention Grant
- Patent Title: RRAM cell including V-shaped structure
- Patent Title (中): RRAM单元包括V形结构
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Application No.: US14162024Application Date: 2014-01-23
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Publication No.: US09246084B2Publication Date: 2016-01-26
- Inventor: Hsing-Chih Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L51/05 ; H01L51/00
Abstract:
Embodiments of a resistive random access memory (RRAM) cell structure are provided. The RRAM cell structure includes a first electrode over a substrate. The RRAM cell structure also includes a resistance variable layer over the first electrode. The resistance variable layer has a first portion in a V-shape. The RRAM cell structure further includes a second electrode over the resistance variable layer.
Public/Granted literature
- US20150207065A1 RRAM CELL INCLUDING V-SHAPED STRUCTURE Public/Granted day:2015-07-23
Information query
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