Invention Grant
- Patent Title: Method for fabricating heat dissipation substrate
- Patent Title (中): 制造散热基板的方法
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Application No.: US13352553Application Date: 2012-01-18
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Publication No.: US09247631B2Publication Date: 2016-01-26
- Inventor: Chen-Chuan Chang
- Applicant: Chen-Chuan Chang
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Priority: TW100112238A 20110408
- Main IPC: H01K3/10
- IPC: H01K3/10 ; H05K1/02 ; H01L33/64 ; H05K3/02 ; H05K3/40

Abstract:
A method, for fabricating a heat dissipation substrate, includes the steps of: providing a substrate, with the substrate including a metal layer, an insulation layer, and a first conductive layer, with the insulation layer positioned between the metal layer and the first conductive layer, and with the metal layer thicker than the first conductive layer; removing part of the metal layer for forming a metal bulk; providing an adhesive layer including an opening, with the opening corresponding to the metal bulk; providing a second conductive layer; laminating the second conductive layer, the adhesive layer and the substrate; forming a hole in the insulation layer and the first conductive layer, with the hole positioned under the metal bulk; and forming a third conductive layer in the hole.
Public/Granted literature
- US20120255165A1 Method for Fabricating Heat Dissipation Substrate Public/Granted day:2012-10-11
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