发明授权
- 专利标题： Method for forming a layer on a substrate at low temperatures
- 专利标题（中）： 在低温下在基材上形成层的方法
-
申请号： US14131943申请日： 2012-07-12
-
公开(公告)号： US09252011B2公开(公告)日： 2016-02-02
- 发明人: Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
- 申请人： Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
- 申请人地址： DE Blaubeuren
- 专利权人： Centrotherm Photovoltaics AG
- 当前专利权人： Centrotherm Photovoltaics AG
- 当前专利权人地址： DE Blaubeuren
- 代理机构： Tarolli, Sundheim, Covell & Tummino LLP
- 优先权： DE102011107072 20110712
- 国际申请： PCT/EP2012/002947 WO 20120712
- 国际公布： WO2013/007389 WO 20130117
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/02 ; C23C8/10 ; C23C8/36 ; C23C8/38 ; H01J37/32 ; H01L21/67 ; H01L31/0216 ; H01L31/18
摘要：
A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
公开/授权文献
信息查询
IPC分类:
