发明授权
US09252018B2 High-k/metal gate transistor with L-shaped gate encapsulation layer
有权
具有L形栅极封装层的高k /金属栅极晶体管
- 专利标题： High-k/metal gate transistor with L-shaped gate encapsulation layer
- 专利标题（中）： 具有L形栅极封装层的高k /金属栅极晶体管
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申请号： US13571977申请日： 2012-08-10
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公开(公告)号： US09252018B2公开(公告)日： 2016-02-02
- 发明人: Renee T. Mo , Wesley C. Natzle , Vijay Narayanan , Jeffrey W. Sleight
- 申请人： Renee T. Mo , Wesley C. Natzle , Vijay Narayanan , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Thomas Grzesik
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L29/49 ; H01L29/51 ; H01L29/66
摘要：
A transistor is provided that includes a silicon layer with a source region and a drain region, a gate stack disposed on the silicon layer between the source region and the drain region, an L shaped gate encapsulation layer disposed on sidewalls of the gate stack, and a spacer disposed above the horizontal portion of the gate encapsulation layer and adjacent to the vertical portion of the gate encapsulation layer. The gate stack has a first layer of high dielectric constant material, a second layer comprising a metal or metal alloy, and a third layer comprising silicon or polysilicon. The gate encapsulation layer has a vertical portion covering the sidewalls of the first, second, and third layers of the gate stack and a horizontal portion covering a portion of the silicon layer that is adjacent to the gate stack.
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