Invention Grant
- Patent Title: CMOS-compatible gold-free contacts
- Patent Title (中): CMOS兼容的无金触点
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Application No.: US13995689Application Date: 2011-12-22
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Publication No.: US09252118B2Publication Date: 2016-02-02
- Inventor: Siddharth Jain , John Bowers , Matthew Sysak , John Heck , Ran Feldesh , Richard Jones , Yoel Shetrit , Michael Geva
- Applicant: Siddharth Jain , John Bowers , Matthew Sysak , John Heck , Ran Feldesh , Richard Jones , Yoel Shetrit , Michael Geva
- Applicant Address: US CA Santa Clara US CA Oakland
- Assignee: INTEL CORPORATION,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: INTEL CORPORATION,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Santa Clara US CA Oakland
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/066907 WO 20111222
- International Announcement: WO2013/095523 WO 20130627
- Main IPC: H01S5/042
- IPC: H01S5/042 ; H01L23/00 ; H01L21/8238 ; H01L21/8258 ; H01L21/285 ; H01L29/45 ; H01L27/12 ; H01L29/20 ; H01S5/02
Abstract:
A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.
Public/Granted literature
- US20140050243A1 CMOS-COMPATIBLE GOLD-FREE CONTACTS Public/Granted day:2014-02-20
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