A method for improving analog gain in long channel devices associated with a semiconductor workpiece is provided. A gate oxide layer is formed on the semiconductor workpiece, and a plurality of gate structures are formed over the gate oxide layer, wherein a first pair of the plurality of gate structures define a short channel device region and a second pair of the plurality of gate structures define a long channel device region. A first ion implantation with a first dopant is performed at a first angle, wherein the first dopant is one of an n-type dopant and a p-type dopant. A second ion implantation with a second dopant is performed at a second angle, wherein the second angle is greater than the first angle. The second dopant is one or an n-type dopant and a p-type dopant that is opposite of the first dopant, and a height of the plurality of gate structures and the second angle generally prevents the second ion implantation from implanting ions into the short channel device region.