Invention Grant
US09252260B2 Semiconductor device, and a method of improving breakdown voltage of a semiconductor device
有权
半导体装置以及提高半导体装置的击穿电压的方法
- Patent Title: Semiconductor device, and a method of improving breakdown voltage of a semiconductor device
- Patent Title (中): 半导体装置以及提高半导体装置的击穿电压的方法
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Application No.: US13939556Application Date: 2013-07-11
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Publication No.: US09252260B2Publication Date: 2016-02-02
- Inventor: Edward John Coyne , Breandan Pol Og O hAnnaidh , Seamus P. Whiston , William Allan Lane , Donai P. McAuliffe
- Applicant: ANALOG DEVICES GLOBAL
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/08 ; H01L29/10
Abstract:
A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.
Public/Granted literature
- US20150014791A1 SEMICONDUCTOR DEVICE, AND A METHOD OF IMPROVING BREAKDOWN VOLTAGE OF A SEMICONDUCTOR DEVICE Public/Granted day:2015-01-15
Information query
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