MONOLITHIC PHASE CHANGE HEAT SINK
    1.
    发明申请

    公开(公告)号:US20190039883A1

    公开(公告)日:2019-02-07

    申请号:US15666475

    申请日:2017-08-01

    Abstract: A monolithic vapor chamber heat dissipating device uses a phase change liquid and one or more wicks to dissipate heat from a heat-generating system. The phase change liquid and one or more wicks may be directly coupled to the heat-generating system, or may be coupled to an intermediate evaporator substrate. The phase change liquid vaporizes as it absorbs heat from the heat-generating system. When the vapor rises and encounters a condenser substrate, the vapor condenses and transfers the heat to the condenser substrate. The condensed vapor is drawn by gravity and the one or more wicks to the phase change liquid coupled to the heat-generating system.

    Monolithic phase change heat sink

    公开(公告)号:US10597286B2

    公开(公告)日:2020-03-24

    申请号:US15666475

    申请日:2017-08-01

    Abstract: A monolithic vapor chamber heat dissipating device uses a phase change liquid and one or more wicks to dissipate heat from a heat-generating system. The phase change liquid and one or more wicks may be directly coupled to the heat-generating system, or may be coupled to an intermediate evaporator substrate. The phase change liquid vaporizes as it absorbs heat from the heat-generating system. When the vapor rises and encounters a condenser substrate, the vapor condenses and transfers the heat to the condenser substrate. The condensed vapor is drawn by gravity and the one or more wicks to the phase change liquid coupled to the heat-generating system.

    Integrated ion sensing apparatus and methods

    公开(公告)号:US10288582B2

    公开(公告)日:2019-05-14

    申请号:US14993871

    申请日:2016-01-12

    Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

    TEST METHOD AND DEVICE
    9.
    发明申请
    TEST METHOD AND DEVICE 审中-公开
    测试方法和设备

    公开(公告)号:US20150233857A1

    公开(公告)日:2015-08-20

    申请号:US14183046

    申请日:2014-02-18

    CPC classification number: G01N27/14 G01N27/18

    Abstract: Methods, devices and electronic components are disclosed, including a method of testing an integrity of a reduced gas pressure region at at least part of an electronic device, the method comprising applying a first current or voltage to a conductor, wherein the conductor includes at least one thermocouple formed on the device, and measuring an electrical property of the device.

    Abstract translation: 公开了方法,装置和电子部件,包括在电子装置的至少一部分处测试降低的气体压力区域的完整性的方法,所述方法包括向导体施加第一电流或电压,其中所述导体至少包括 一个热电偶形成在器件上,并测量器件的电气特性。

Patent Agency Ranking