Invention Grant
- Patent Title: Fin field effect transistors including multiple lattice constants and methods of fabricating the same
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Application No.: US14579222Application Date: 2014-12-22
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Publication No.: US09252274B2Publication Date: 2016-02-02
- Inventor: Myung Gil Kang , Changwoo Oh , Heedon Jeong , Chiwon Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0022837 20120306
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L21/8238 ; H01L29/66
Abstract:
A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.
Public/Granted literature
- US20150108545A1 FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS AND METHODS OF FABRICATING THE SAME Public/Granted day:2015-04-23
Information query
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