公开(公告)号：US10229911B2

公开(公告)日：2019-03-12

申请号：US15685657

申请日：2017-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L27/092 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06 ,  H01L23/485 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/11 ,  H01L29/417 ,  H01L29/165 ,  H01L21/8234

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US10431586B2

公开(公告)日：2019-10-01

申请号：US16244540

申请日：2019-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L27/092 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/11 ,  H01L27/088 ,  H01L27/02 ,  H01L29/66 ,  H01L29/165 ,  H01L21/8234

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US09748243B2

公开(公告)日：2017-08-29

申请号：US15049721

申请日：2016-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L21/70 ,  H01L27/092 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06 ,  H01L23/485 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US09252274B2

公开(公告)日：2016-02-02

申请号：US14579222

申请日：2014-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Changwoo Oh ,  Heedon Jeong ,  Chiwon Cho

IPC: H01L29/78 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/7856

Abstract: A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.

公开(公告)号：US20150108545A1

公开(公告)日：2015-04-23

申请号：US14579222

申请日：2014-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Changwoo Oh ,  Heedon Jeong ,  Chiwon Cho

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/7856

Abstract: A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.

Abstract translation: 场效应晶体管（FET）结构可以包括在鳍的相应不同轴向取向表面上的具有第一晶格常数和至少两个不同晶格常数层的衬底上的鳍，其中所述至少两个不同的晶格常数层各自包括晶格 与第一晶格常数不同的常数和彼此。