发明授权
- 专利标题: Semiconductor light emitting element
- 专利标题(中): 半导体发光元件
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申请号: US13813792申请日: 2011-08-05
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公开(公告)号: US09252330B2公开(公告)日: 2016-02-02
- 发明人: Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
- 申请人: Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
- 申请人地址: JP Osaka
- 专利权人: Panasonic Intellectual Property Management Co., Ltd.
- 当前专利权人: Panasonic Intellectual Property Management Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 优先权: JP2010-177914 20100806
- 国际申请: PCT/JP2011/004465 WO 20110805
- 国际公布: WO2012/017685 WO 20120209
- 主分类号: H01L33/32
- IPC分类号: H01L33/32 ; H01L33/16 ; H01L33/20 ; H01L33/00
摘要:
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
公开/授权文献
- US20130126902A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 公开/授权日:2013-05-23