发明授权
- 专利标题： Methods of fabricating low melting point solder reinforced sealant and structures formed thereby
- 专利标题（中）： 制造低熔点焊料增强密封剂和由此形成的结构的方法
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申请号： US12655407申请日： 2009-12-30
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公开(公告)号： US09254532B2公开(公告)日： 2016-02-09
- 发明人: Deepak V. Kulkarni , Carl L. Deppisch , Leonel R. Arana , Gregory S. Constable , Sriram Srinivasan
- 申请人： Deepak V. Kulkarni , Carl L. Deppisch , Leonel R. Arana , Gregory S. Constable , Sriram Srinivasan
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/12 ; H01L23/10 ; H01L23/34 ; B23K1/00 ; B23K3/08
摘要：
Methods and associated structures of forming a package structure including forming a low melting point solder material on a solder resist opening location of an IHS keep out zone, forming a sealant in a non SRO keep out zone region; attaching the IHS to the sealant, and curing the sealant, wherein a solder joint is formed between the IHS and the low melting point solder material.
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