Invention Grant
US09256120B2 Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography 有权
通过光刻法进行光学邻近校正以制备投影到晶片上的掩模的方法

Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography
Abstract:
A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.
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