公开(公告)号：US09147033B2

公开(公告)日：2015-09-29

申请号：US14024533

申请日：2013-09-11

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo ,  Hua-Biao Wu

IPC: G06F17/50 ,  G06F17/30

CPC classification number: G06F17/5081 ,  G03F1/38

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract translation: 提供了制作光掩模布局的方法。 提供光掩模的图形数据。 图形数据包括至少一个矩形图案。 通过使用计算机对图形数据执行校正步骤。 校正步骤包括在矩形图案内部添加大致环形图案。 还提供了通过使用通过所述方法获得的光掩模布局形成光掩模的方法。 在一个实施例中，光掩模适用于定义固态图像传感器的微透镜。

公开(公告)号：US09256120B2

公开(公告)日：2016-02-09

申请号：US14561196

申请日：2014-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 根据与特定趋势部分对应的规则，通过计算机系统对边缘进行光学接近校正值的评估。 布局设计用光学接近校正值补偿。

公开(公告)号：US20150074620A1

公开(公告)日：2015-03-12

申请号：US14024533

申请日：2013-09-11

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo ,  Hua-Biao Wu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/38

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract translation: 提供了制作光掩模布局的方法。 提供光掩模的图形数据。 图形数据包括至少一个矩形图案。 通过使用计算机对图形数据执行校正步骤。 校正步骤包括在矩形图案内部添加大致环形图案。 还提供了通过使用通过所述方法获得的光掩模布局形成光掩模的方法。 在一个实施例中，光掩模适用于定义固态图像传感器的微透镜。

公开(公告)号：US08938697B1

公开(公告)日：2015-01-20

申请号：US14010554

申请日：2013-08-27

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design comprising a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system by a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 通过与特定趋势部分对应的规则通过计算机系统对边缘进行光学邻近校正值的评估。 布局设计用光学接近校正值补偿。

公开(公告)号：US20150089460A1

公开(公告)日：2015-03-26

申请号：US14561196

申请日：2014-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 根据与特定趋势部分对应的规则，通过计算机系统对边缘进行光学接近校正值的评估。 布局设计用光学接近校正值补偿。