发明授权
- 专利标题： Memory cell with independently-sized electrode
- 专利标题（中）： 具有独立尺寸电极的记忆体
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申请号： US14036788申请日： 2013-09-25
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公开(公告)号： US09257431B2公开(公告)日： 2016-02-09
- 发明人: Marcello Ravasio , Samuele Sciarrillo , Andrea Gotti
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/28 ; H01L21/3213 ; H01L45/00 ; H01L27/24 ; H01L27/22
摘要：
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.
公开/授权文献
- US20150084156A1 MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE 公开/授权日：2015-03-26
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