Invention Grant
- Patent Title: Integrated circuit, method for driving the same, and semiconductor device
- Patent Title (中): 集成电路及其驱动方法以及半导体器件
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Application No.: US14541305Application Date: 2014-11-14
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Publication No.: US09257971B2Publication Date: 2016-02-09
- Inventor: Masami Endo , Takuro Ohmaru
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-270534 20101203
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C7/00 ; G11C8/00 ; H03K3/356 ; H03K21/02 ; H03K21/40 ; H03K3/012

Abstract:
A semiconductor device includes a first latch, a second latch and a transistor whose semiconductor layer contains an oxide semiconductor. An input of the first latch is electrically connected to one of a source and a drain of the transistor, an output of the first latch is electrically connected to an input of the second latch, and an output of the second latch is electrically connected to the other of the source or the drain of the transistor.
Public/Granted literature
- US20150070064A1 INTEGRATED CIRCUIT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR DEVICE Public/Granted day:2015-03-12
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