Invention Grant
US09257971B2 Integrated circuit, method for driving the same, and semiconductor device 有权
集成电路及其驱动方法以及半导体器件

Integrated circuit, method for driving the same, and semiconductor device
Abstract:
A semiconductor device includes a first latch, a second latch and a transistor whose semiconductor layer contains an oxide semiconductor. An input of the first latch is electrically connected to one of a source and a drain of the transistor, an output of the first latch is electrically connected to an input of the second latch, and an output of the second latch is electrically connected to the other of the source or the drain of the transistor.
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