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US09263135B2 Programming schemes for 3-D non-volatile memory 有权
3-D非易失性存储器的编程方案

Programming schemes for 3-D non-volatile memory
Abstract:
A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section.
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