Invention Grant
- Patent Title: Programming schemes for 3-D non-volatile memory
- Patent Title (中): 3-D非易失性存储器的编程方案
-
Application No.: US13804427Application Date: 2013-03-14
-
Publication No.: US09263135B2Publication Date: 2016-02-16
- Inventor: Yoav Kasorla , Avraham Poza Meir , Eyal Gurgi
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C11/56 ; G11C16/34

Abstract:
A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section.
Public/Granted literature
- US20140269051A1 PROGRAMMING SCHEMES FOR 3-D NON-VOLATILE MEMORY Public/Granted day:2014-09-18
Information query