Invention Grant
- Patent Title: Semiconductor device having fin-shaped structure and method for fabricating the same
- Patent Title (中): 具有鳍状结构的半导体器件及其制造方法
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Application No.: US14312707Application Date: 2014-06-24
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Publication No.: US09263257B2Publication Date: 2016-02-16
- Inventor: Chin-Cheng Chien , Hsin-Kuo Hsu , Chih-Chien Liu , Chin-Fu Lin , Chun-Yuan Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410247402 20140605
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/336 ; H01L21/8232 ; H01L29/08 ; H01L29/16 ; H01L29/43 ; H01L29/78 ; H01L29/417 ; H01L21/02 ; H01L21/311 ; H01L29/36 ; H01L29/06
Abstract:
A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.
Public/Granted literature
- US20150357190A1 SEMICONDUCTOR DEVICE HAVING FIN-SHAPED STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-12-10
Information query
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